features trenchfet power mosfet low r ds(on) pwm (q gd and r g ) optimized 100% r g tested applications low-side mosfet in synchronous buck dc/dc converters in desktops low output voltage synchronous rectifier si7866dp vishay siliconix document number: 71848 s-31727?rev. c, 18-aug-03 www.vishay.com 1 n-channel 20-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 20 0.0025 @ v gs = 10 v 29 20 0.00375 @ v gs = 4.5 v 25 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view n-channel mosfet g d s ordering information: SI7866DP-T1 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 20 v gate-source v oltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 29 18 continuous drain current (t j = 150 c) a t a = 70 c i d 25 14 a pulsed drain current (10 s pulse width) i dm 60 a continuous source current (diode conduction) a i s 4.5 1.6 maximum power dissipation a t a = 25 c p d 5.4 1.9 w maximum power dissipation a t a = 70 c p d 3.4 1.2 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 18 23 maximum junction-to-ambient a steady state r thja 50 65 c/w maximum junction-to-case (drain) steady state r thjc 1.0 1.5 c/w notes a. surface mounted on 1? x 1? fr4 board.
si7866dp vishay siliconix www.vishay.com 2 document number: 71848 s-31727?rev. c, 18-aug-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.8 2.1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain - source on - state resistance a r ds(on) v gs = 10 v, i d = 29 a 0.0020 0.0025 drain - so u rce on - state resistance a r ds(on) v gs = 4.5 v, i d = 25 a 0.0026 0.00375 forward t ransconductance a g fs v ds = 6 v, i d = 29 a 95 s diode forward voltage a v sd i s = 4.5 a, v gs = 0 v 0.68 1.1 v dynamic b total gate charge q g 40 60 gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 29 a 15 nc gate-drain charge q gd 11 gate resistance r g 0.5 1.2 1.8 turn-on delay time t d(on) 70 100 rise time t r v dd = 10 v, r l = 10 60 90 turn-off delay time t d(off) v dd = 10 v , r l = 10 i d 1 a, v gen = 4.5 v, r g = 6 105 160 ns fall time t f 55 85 source-drain reverse recovery time t rr i f = 2.9 a, di/dt = 100 a/ s 65 100 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 10 20 30 40 50 60 012345 v gs = 10 thru 3 v 25 c t c = 125 c -55 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d
si7866dp vishay siliconix document number: 71848 s-31727?rev. c, 18-aug-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0.000 0.002 0.004 0.006 0.008 0.010 0246810 0.000 0.001 0.002 0.003 0.004 0.005 0 102030405060 0.0 1.2 2.4 3.6 4.8 6.0 0 1224364860 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 0 1600 3200 4800 6400 8000 0 4 8 12 16 20 c rss c oss c iss v ds = 10 v i d = 29 a v gs = 10 v i d = 29 a v gs = 4.5 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction temperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 1.0 1.2 1 10 60 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c source-drain diode forward voltage v sd - source-to-drain voltage (v) - source current (a) i s i d = 29 a on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v gs - gate-to-source voltage (v) v gs = 10 v
si7866dp vishay siliconix www.vishay.com 4 document number: 71848 s-31727?rev. c, 18-aug-03 typical characteristics (25 c unless noted) -0.6 -0.4 -0.2 -0.0 0.2 0.4 -50 -25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j - temperature ( c) 0 120 200 40 80 power (w) single pulse power time (sec) 160 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effec tive transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 50 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 110 0.1 0.01 0.001
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